BSO080P03NS3 G

BSO080P03NS3 G OptiMOS™3 P3-Power-Transistor Product Summary Features VDS • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature RDS(on),max -30 V VGS=-10 V 8.0 mW VGS=-6 V 11.4 ID -14.8 A • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant PG-DSO-8 • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free Packing BSO080P03NS3 G PG-DSO-8 080P3NS Yes Yes non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Value Symbol Conditions ID Unit 10 secs steady state V GS=-10 V, T A=25 °C -14.8 -12 V GS=-10 V, T A=70 °C -11.8 -9.4 V GS=-6 V, T A=25 °C -12.4 -9.8 V GS=-6 V, T A=70 °C -9.9 -7.8 A Pulsed drain current2) I D,pulse T A=25 °C -48 Avalanche energy, single pulse E AS I D=-14.8 A, R GS=25 W 149 mJ Gate source voltage V GS ±25 V Power dissipation1) P tot Operating and storage temperature T j, T stg ESD class T A=25 °C 1.6 -55 ... 150 JESD22-A114 HBM W °C 1C (1 kV - 2 kV) 260 Soldering temperature °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 2.21 2.5 page 1 2011-11-02 BSO080P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 50 6 cm2 cooling area1), steady state - - 80 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-0.25 mA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-150 µA -3.1 -2.5 -1.9 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 V DS=-30 V, V GS=0 V, T j=125 °C - - -100 V µA Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-6 V, I D=-12.4 A - 8.1 11.0 mW V GS=-10 V, I D=-14.8 A - 6.7 8.0 - 5.9 - W 22 44 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-14.8 A 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.21 page 2 2011-11-02 BSO080P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 4500 6750 - 2100 3150 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 150 225 Turn-on delay time t d(on) - 16 24 Rise time tr - 47 70 Turn-off delay time t d(off) - 64 96 Fall time tf - 19 28.5 Gate to source charge Q gs - 18 23 Gate charge at threshold Q g(th) - 7 10 Gate to drain charge Q gd - 8 11 Switching charge Q sw - 18 25 Gate charge total Qg - 61 81 Gate plateau voltage V plateau - 3.9 - Output charge Q oss - 49 65 nC - - 3.4 A - - 48 - - -1.1 - 48 - nC - 49 - ns V DD=-15 V, V GS=10 V, I D=-14.8 A, R G=1.6 W ns Gate Charge Characteristics4) V DD=-15 V, I D=-14.8 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery charge Q rr Reverse recovery time t rr 4) T A=25 °C V GS=0 V, I F=-14.8 A, T j=25 °C V R=-15 V, I F=I S, di F/dt =400 A/µs V See figure 16 for gate charge parameter definition Rev. 2.21 page 3 2011-11-02 BSO080P03NS3 G 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); t p≤10 s parameter: V GS 3 16 2.5 12 2 10 V -ID [A] Ptot [W] 6.0 V 1.5 8 1 4 0.5 0 0 40 80 120 0 160 0 40 80 TA [°C] 120 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C2); D =0 Z thJA=f(t p)2) parameter: t p parameter: D =t p/T 103 102 0.5 limited by on-state resistance 102 101 10 µs 0.2 0.1 ZthJA [K/W] 100 µs -ID [A] 160 1 ms 101 10 ms 0.05 100 0.02 0.01 100 ms 100 10-1 10 s 10-1 single pulse 10-2 10-1 100 101 102 VDS [V] Rev. 2.21 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2011-11-02 BSO080P03NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 15 10 V 14 6V 4.5 V 13 12 4.5 V RDS(on) [mW] 11 -ID [A] 40 4.2 V 20 5V 10 9 6V 8 7 4.0 V 10 V 6 5 4 3.5 V 0 3 0 1 2 3 0 10 -VDS [V] 20 30 40 50 60 -ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 60 60 50 50 40 40 gfs [S] -ID [A] parameter: T j 30 20 30 20 150 °C 10 10 25 °C 0 0 0 1 2 3 4 5 6 -VGS [V] Rev. 2.21 0 10 20 30 40 -ID [A] page 5 2011-11-02 BSO080P03NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-14.8 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-150µA 11 4 10 3.5 9 3 98 % 2.5 7 -VGS(th) [V] RDS(on) [mW] 8 typ 2 6 1.5 5 1 4 0.5 3 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss Coss 150 °C 102 25 °C IF [A] C [pF] 103 101 25 °C, 98% Crss 102 150 °C, 98% 100 101 10-1 0 10 20 30 -VDS [V] Rev. 2.21 0 0.5 1 1.5 2 -VSD [V] page 6 2011-11-02 BSO080P03NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-14.8 A pulsed parameter: T j(start) parameter: V DD 100 10 -15 V 9 -6 V 8 7 25 °C 10 -24 V 100 °C 125 °C -VGS [V] -IAV [A] 6 5 4 1 3 2 1 0.1 1 10 100 0 1000 0 20 tAV [µs] 40 60 80 -Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 -VBR(DSS) [V] 30 28 26 V g s(th) 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.21 page 7 2011-11-02 BSO080P03NS3 G Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev. 2.21 page 8 2011-11-02 BSO080P03NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.21 page 9 2011-11-02